This article presents a comprehensive analysis of the theoretical and practical aspects of selecting contact materials in the process of current extraction from semiconductor materials. In particular, the physical processes occurring at the metal–semiconductor interface, including energy band alignment, work function differences, and charge carrier distribution, are thoroughly investigated. The formation mechanisms of ohmic and Schottky contacts, their physical nature, and practical applications are explained from a scientific perspective. Furthermore, the spatial distribution of electric potential in the contact region, the formation of internal electric fields, and the drift and diffusion processes of electrons and holes are analyzed using mathematical modeling based on boundary conditions. The electro-physical processes in the contact region are described using Poisson’s equation, current density equations, and charge conservation laws. During the study, key parameters such as contact resistance, electrical conductivity, and energy losses were comparatively analyzed for different contact materials. The obtained results are presented in the form of tables, graphs, and diagrams, providing a comprehensive evaluation of how contact parameters influence the performance of semiconductor devices. The results indicate that optimal selection of contact materials, proper control of doping levels, and accurate consideration of boundary conditions can significantly improve the electrical characteristics of semiconductor devices. The findings of this research serve as an important scientific foundation for the design and optimization of modern semiconductor devices, enhancing their efficiency and enabling the development of next-generation electronic systems.